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| TCZT8020 Vishay Semiconductors Matched Pairs of Emitters and Detectors Description The TCZT8020 include matched infrared emitters and phototransistors in leaded packages, dedicated to assemble custom designed transmissive sensors or reflective sensors. The package of phototransistor blocks visible light. Features * Package type: Leaded * Detector type: Phototransistor * Dimensions: e4 L 4.4 mm x W 2 mm x H 3 mm * Typical output current under test: IC = 0.5 mA * Daylight blocking filter * Emitter wavelength: 950 nm * Angle of half intensity: = 25 * S420P: single detector component * V420P: single emitter component * Lead (Pb)-free soldering released * Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC * Minimum order quantity: 2500 pairs in bulk 96 12317 Applications * Custom design sensors for various distances * Reflective sensors * Transmissive Sensors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Coupler Parameter Ambient temperature range Storage temperature range Soldering temperature Distance to package 2 mm, t5s Test condition Symbol Tamb Tstg Tsd Value - 55 to + 85 - 55 to + 100 260 Unit C C C Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature t 10 s Tamb 25 C Test condition Symbol VR IF IFSM PV Tj Value 6 60 1 100 100 Unit V mA A mW C Document Number 83774 Rev. 1.4, 04-Sep-06 www.vishay.com 1 TCZT8020 Vishay Semiconductors Output (Detector) Parameter Collector-emitter voltage Emitter-collector voltage Collector current Collector peak current Power dissipation Junction temperature tp/T = 0.5, t 10 ms Tamb 25 C Test condition Symbol VCEO VECO IC ICM PV Tj Value 70 7 50 100 150 100 Unit V V mA mA mW C CTR Parameter IC/IF Test condition VCE = 5 V, IF = 20 mA Symbol CTR Min 0.0125 Typ. 0.025 Max Unit 200 P - Total Power Dissipation (mW) 180 160 140 120 100 80 60 40 20 0 0 96 11947 Phototransistor IR- diode 25 50 75 100 Tamb - Ambient Temperature (C) Figure 1. Power Dissipation Limit vs. Ambient Temperature Electrical Characteristics Tamb = 25 C, unless otherwise specified Coupler Parameter Collector current IC/IF Collector emitter saturation voltage Cut-off frequency 1) Test condition VCE = 5 V, IF = 20 mA VCE = 5 V, IF = 20 mA IF = 20 mA, IC = 25 A IF = 10 mA, VCE = 5 V, RL = 100 Symbol IC1) CTR VCEsat fC 110 Min 0.25 1.25 Typ. 0.5 2.5 0.4 V kHz Max Unit mA Characteristics are measurement with 4 mm (0.55") distance between emitter and detector, within a common axis of 0.5 mm (0.02") and with parallel alignment within 5 Input (Emitter) Parameter Forward voltage Radiant intensity Peak wavelength Virtual source diameter Test condition IF = 50 mA IF = 60 mA, tP = 20 ms IF = 100 mA DIN EN ISO 1146/1:2005 Symbol VF Ie P O 940 1.1 Min Typ. 1.25 Max 1.6 7.8 Unit V mW/sr nm mm www.vishay.com 2 Document Number 83774 Rev. 1.4, 04-Sep-06 TCZT8020 Vishay Semiconductors Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test condition IC = 1 mA IE = 100 A VCE = 25 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min 70 7 100 Typ. Max Unit V V nA Switching Characteristics Parameter Turn-on time Turn-off time Test condition VS = 5 V, IC = 1 mA, RL = 100 (see figure 10) VS = 5 V, IC = 1 mA, RL = 100 (see figure 10) Symbol ton toff Min Typ. 15.0 10.0 Max Unit s s Typical Characteristics Tamb = 25 C, unless otherwise specified 1000 ICEO - Collector Dark Current (nA) 10000 VCE = 25 V IF = 0 I F - Forward Current (mA) 100 1000 10 100 1 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 1 0 95 11090 V F - Forward Voltage (V) 25 50 75 Tamb - Ambient Temperature (C) 100 Figure 2. Forward Current vs. Forward Voltage Figure 4. Collector Dark Current vs. Ambient Temperature CTR rel - Relative Current Transfer Ratio 2.0 1.5 I C - Collector Current (mA) V CE = 5 V I F = 20 mA d = 4 mm 10 VCE = 5 V d = 4 mm 1 1.0 0.1 0.5 0.01 0 - 25 0 25 50 75 0.001 0.1 95 11111 1 10 100 95 11097 Tamb - Ambient Temperature (C) I F - Forward Current (mA) Figure 3. Relative Current Transfer Ratio vs. Ambient Temperature Figure 5. Collector Current vs. Forward Current Document Number 83774 Rev. 1.4, 04-Sep-06 www.vishay.com 3 TCZT8020 Vishay Semiconductors 10 d = 4 mm I C - Collector Current (mA) I F = 50 mA 1 20 mA 10 mA 0.1 5 mA 2 mA 0.01 0.1 95 11112 10 IC - Collector Current (mA) d 1 0.1 VCE = 5 V IF = 20 mA Tamb = 25 C 2 4 6 8 10 d - Distance (mm) 100 10 VCE - Collector Emitter Voltage (V) 1 0.01 0 95 11115 Figure 6. Collector Current vs. Collector Emitter Voltage Figure 9. Collector Current vs. Distance 100 CTR - Current Transfer Ratio (%) V CE = 5 V d = 4 mm 0 10 IF IF +5V IC = 1 mA; adjusted by IF 1 RG = 50 tp = 0.01 T tp = 50 s Channel I Channel II Oscilloscope RL CL 1M 20 pF 0.1 0.1 95 11114 50 1 10 100 95 10846 100 I F - Forward Current (mA) Figure 7. Current Transfer Ratio vs. Forward Current Figure 10. Pulse diagram IF 96 11698 20 t on /t off - Turn on/Turn off Time (s) 0 15 t on 10 t off 5 Non Saturated Operation VS = 5 V R L= 100 d = 4 mm IC 100 % 90 % tp t 10 % 0 tr td ton pulse duration delay time rise time turn-on time ts tf toff t storage time fall time turn-off time 0 0 2 4 6 8 10 I C - Collector Current (mA) 95 11104 tp td tr ton (=td+ t r ) ts tf toff (= ts + tf) Figure 8. Turn on/off Time vs. Forward Current Figure 11. Switching Times www.vishay.com 4 Document Number 83774 Rev. 1.4, 04-Sep-06 TCZT8020 Vishay Semiconductors Package Dimensions in mm DETECTOR (BLACK) DIMENSIONS LIKE EMITTER PACKAGE 96 12106 Document Number 83774 Rev. 1.4, 04-Sep-06 www.vishay.com 5 TCZT8020 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 Document Number 83774 Rev. 1.4, 04-Sep-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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